Ion implantation induced nitrogen defects in GaN | 10.1088/0022-3727/48/45/455107

Usman, Muhammad; Hallén, Anders; Nazir, Aftab . (2015). Ion implantation induced nitrogen defects in GaN. Journal of Physics D: Applied Physics, 48(45), 455107–. doi:10.1088/0022-3727/48/45/455107

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