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Asif Khan, M.; Skogman, R. A.; Van Hove, J. M.; Olson, D. T.; Kuznia, J. N. . (1992). Atomic layer epitaxy of GaN over sapphire using switched metalorganic chemical vapor deposition. Applied Physics Letters, 60(11), 1366–. doi:10.1063/1.107484 

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